CNTs, Graphene and 2D Materials

Invited Speakers:

• Matthias Batzill, University of South Florida, USA
  Interfaces between transferred, CVD-grown graphene and MoS2 probed with STM and ARPES
• Friedhelm Bechstedt, Institut für Festkörpertheorie und –optik, Germany
  Silicene, germanene, silicane, germanane, etc.
• Cristian V. Ciobanu, Colorado School of Mines, USA
  Bandgap control in graphene-molybdenum disulfide bilayer structures
• Shintaro Fujii, Tokyo Institute of Technology, Japan
  Chemistry and electronic structure at graphene edges
• Jing Guo, University of Florida, USA
  Atomically thin vertical heterojunction devices
• Swastik Kar, Northeastern University, USA
  Applications of Photon-electron interactions for advanced optoelectronics in 2D materials
• Saiful I. Khondaker, University of Central Florida, USA
  Tailoring the properties of two dimensional molybdenum disulfide
• Joachim Knoch, RWTH Aachen University, Germany
  Band-to-band tunnel FETs in one and two-dimensional materials
• Jean-Luc Maurice, CNRS, France
  In situ TEM analysis of catalyst-assisted growth of multiwall carbon nanotubes and nanofibers
• Mark H. Rummeli, Sungkyunkwan University, Korea
  In situ TEM investigations of Fe atoms at graphene edges and pores
• Masahiro Yoshimura, National Cheng Kung University, Taiwan
  One-step fabrication of functionalized graphene materials via submerged liquid plasma [SLP] in solvent under ambient conditions

Workshop Chair:

• Didier Pribat, Sungkyunkwan University, Korea