CNTs, Graphene and 2D Materials

Invited Speakers:

  • Matthias Batzill, University of South Florida, USA
    Interfaces between transferred, CVD-grown graphene and MoS2 probed with STM and ARPES
  • Friedhelm Bechstedt, Institut für Festkörpertheorie und –optik, Germany
    Silicene, germanene, silicane, germanane, etc.
  • Cristian V. Ciobanu, Colorado School of Mines, USA
    Bandgap control in graphene-molybdenum disulfide bilayer structures
  • Shintaro Fujii, Tokyo Institute of Technology, Japan
    Chemistry and electronic structure at graphene edges
  • Jing Guo, University of Florida, USA
    Atomically thin vertical heterojunction devices
  • Swastik Kar, Northeastern University, USA
    Applications of Photon-electron interactions for advanced optoelectronics in 2D materials
  • Saiful I. Khondaker, University of Central Florida, USA
    Tailoring the properties of two dimensional molybdenum disulfide
  • Joachim Knoch, RWTH Aachen University, Germany
    Band-to-band tunnel FETs in one and two-dimensional materials
  • Jean-Luc Maurice, CNRS, France
    In situ TEM analysis of catalyst-assisted growth of multiwall carbon nanotubes and nanofibers
  • Mark H. Rummeli, Sungkyunkwan University, Korea
    In situ TEM investigations of Fe atoms at graphene edges and pores
  • Masahiro Yoshimura, National Cheng Kung University, Taiwan
    One-step fabrication of functionalized graphene materials via submerged liquid plasma [SLP] in solvent under ambient conditions


Workshop Chair:

  • Didier Pribat, Sungkyunkwan University, Korea
Operating Organization



University of Electronic Science and Technology of China