Spin Electronics Devices

Invited Speakers:

  • Physics research specialists from prime essay service https://prime-essay.net
  • Janusz Adamowski, AGH University of Science and Technology, Poland
    Spin-polarized electron current modification in gated semiconductor nanowires
  • Hiroyuki Awano, Toyota Technological Institute, Japan
    Investigation of current driven domain wall motion for RE-TM magnetic wire device
  • Lionel Calmels, CEMES, CNRS and Université de Toulouse, France
    Electron states and coherent tunneling in FeCo/MgO/FeCo(001) magnetic tunnel junctions
  • Irina Fedorchenko, Russian Academy of Sciences, Russian Federation
    Granular structures in semiconductor-ferromagnetic systems as promising materials for spintronics
  • Atsufumi Hirohata, University of York, UK
    Transport and structural properties of the abrupt Fe/GaAs(001) interface
  • Hyuk-Jae Jang, National Institute of Standards and Technology,USA
    Spin transport in organic semiconductors and manipulation of organic magnetoresistance
  • Kuijuan Jin, Chinese Academy of Sciences, China
    Two mechanisms of resistive memories in complex oxide thin films
  • Takashi Kimura , Kyushu University, Japan
    Giant thermal spin accumulation using multi-terminal lateral spin valve structure
  • Bijoy K. Kuanr, University of Colorado at Colorado Springs, USA
    New Opportunities in microwave electronics with ferromagnetic nanostructures
  • Piotr Kuswik, Institute of Molecular Physics, Polish Academy of Sciences, Poland
    Domain replication in perpendicularly magnetized Co/Au/Co system with ferromagnetic and antiferromagnetic interlayer coupling
  • Sayani Majumdar, University of Turku & Aalto University School of Science,Finland
    Half metallic complex oxide LSMO and its application in multiferroic and organic spintronic components
  • Hiroyasu Nakayama, Tohoku University, Japan
    Spin Hall magnetoresistance in magnetic insulator | metal heterostructures
  • Yuzo Ohno, University of Tsukuba, Japan
    Coherent nuclear spin manipulation in GaAs by an electric field
  • Pierre Renucci, Université de Toulouse,INSAT, France
    Electrical spin injection into GaAs through MgO tunnel barriers
  • Shyamal Kumar Saha, Indian Association for the Cultivation of Science, India
    Half metallicity and spin transport in graphene
  • Seiji Sakai, Advanced Science Research Center,Japan Atomic Energy Agency,Japan
    Spin-dependent electronic properties of graphene/magnetic metal interface
  • Hidekazu Saito, National Institute of Advanced Industrial Science and Technology (AIST), Japan
    Electrical creation of spin polarization into Ge by using ferromagnetic
  • Koji Sekiguchi, Keio University, Japan
    Control of spin-wave interference in metallic nanostructures
  • Markus Wohlgenannt, The University of Iowa, USA
    Intrinsic and extrinsic magnetoresistance and magnetoelectroluminescence in organic semiconductor devices
  • Rui Zhu, South China University of Technology, China
    Transport properties in heterostructures based on the helimagnet and skyrmion lattices

Operating Organization


University of Electronic Science and Technology of China